Synthesis of AlN by reactive sputtering

• Published in: Materials science & engineering. B, Solid-state materials for advanced technology Vol. 50; no. 1; pp. 272 - 276
• Main Authors: Randriamora, F, Bruyère, J.C, Deneuville, A
• Format: Journal Article Conference Proceeding
• Language: English
• Published: Amsterdam Elsevier B.V 18.12.1997; Elsevier
• Subjects: AlN synthesis; Condensed matter: electronic structure, electrical, magnetic, and optical properties; Exact sciences and technology; Iii-v semiconductors; Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation; Optical properties of specific thin films; Physics; Reactive sputtering; AlN synthesis; Reactive sputtering; Temperature dependence; Raman spectra; Inorganic compounds; Semiconductor materials; Operating mode; Binary compounds; Subband; Infrared spectra; Experimental study; Fabrication property relation; Absorption coefficients; Cathode sputtering; Energy gap; Preparation; Aluminium nitrides; Absorption spectra; Radiofrequency sputtering

We present a systematic study of the sub-band gap optical absorption coefficients α(h ν) in the range 1.2–6 eV vs. deposition-temperature ( T s from 27 to 450°C) films deposited on silica by 13.6 MHz magnetron sputtering of an Al target with 53 and 72% N 2 in the reactive mixture. X-ray diffraction,...