Synthesis of AlN by reactive sputtering
We present a systematic study of the sub-band gap optical absorption coefficients α(h ν) in the range 1.2–6 eV vs. deposition-temperature ( T s from 27 to 450°C) films deposited on silica by 13.6 MHz magnetron sputtering of an Al target with 53 and 72% N 2 in the reactive mixture. X-ray diffraction,...
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Published in | Materials science & engineering. B, Solid-state materials for advanced technology Vol. 50; no. 1; pp. 272 - 276 |
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Main Authors | , , |
Format | Journal Article Conference Proceeding |
Language | English |
Published |
Amsterdam
Elsevier B.V
18.12.1997
Elsevier |
Subjects | |
Online Access | Get full text |
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