Synthesis of AlN by reactive sputtering

• Published in: Materials science & engineering. B, Solid-state materials for advanced technology Vol. 50; no. 1; pp. 272 - 276
• Main Authors: Randriamora, F, Bruyère, J.C, Deneuville, A
• Format: Journal Article Conference Proceeding
• Language: English
• Published: Amsterdam Elsevier B.V 18.12.1997; Elsevier
• Subjects: AlN synthesis; Condensed matter: electronic structure, electrical, magnetic, and optical properties; Exact sciences and technology; Iii-v semiconductors; Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation; Optical properties of specific thin films; Physics; Reactive sputtering; AlN synthesis; Reactive sputtering; Temperature dependence; Raman spectra; Inorganic compounds; Semiconductor materials; Operating mode; Binary compounds; Subband; Infrared spectra; Experimental study; Fabrication property relation; Absorption coefficients; Cathode sputtering; Energy gap; Preparation; Aluminium nitrides; Absorption spectra; Radiofrequency sputtering
• ISSN: 0921-5107; 1873-4944
• DOI: 10.1016/S0921-5107(97)00174-8

We present a systematic study of the sub-band gap optical absorption coefficients α(h ν) in the range 1.2–6 eV vs. deposition-temperature ( T s from 27 to 450°C) films deposited on silica by 13.6 MHz magnetron sputtering of an Al target with 53 and 72% N 2 in the reactive mixture. X-ray diffraction, infrared absorption and Raman diffusion are also presented, mainly on films deposited on Si in the same run to help in the characterisation of the films. All signals are specific of AlN polycrystalline films, which are of better quality when deposited with 72% N 2. The lowest sub-band gap optical absorption around 5×10 2 cm −1 is obtained for deposition on silica at T s=300°C with 72% N 2 and is close to that of heteroepitaxial films deposited on sapphire.