High-frequency efficient reflection multiplier

• Published in: IEEE transactions on microwave theory and techniques Vol. 39; no. 3; pp. 575 - 579
• Main Authors: Rauschenbach, K., Lee, C.A., Schneider, M.V.
• Format: Journal Article
• Language: English
• Published: IEEE 01.03.1991
• Subjects: Diodes; Inductance; Parasitic capacitance; Performance analysis; Reflection; Submillimeter wave filters; Submillimeter wave propagation; Submillimeter wave technology; Transistors; Transmission lines
• ISSN: 0018-9480; 1557-9670
• DOI: 10.1109/22.75305

The authors propose and calculate the performance of a resistive balanced reflection multiplier capable of high-efficiency operation at submillimeter wavelengths, beyond the useful range of varactor-type multipliers. It consists of a transmission line terminated with an antiparallel diode pair. The multiplier and associated filters can be fabricated with monolithic thin-film techniques to sufficiently minimize high-frequency parasitic elements so that near-ideal efficiencies can be realized. The effect of finite junction capacitance on the performance of the reflection multiplier is analyzed. The effect of parasitic inductance in the line-to-diode connection on the performance of the reflection harmonic generator is modeled. This inductance in the reflection multiplier is modeled by a lumped element connected in series with the load. A closed-form distributed analysis is used to show that this reflection design can achieve a 6.7% third-harmonic conversion efficient, which is approximately a 23% increase compared with an ideal resistive balanced transmission multiplier.< >