Investigation of AlGaN/GaN Heterostructures Grown on Sputtered AlN Templates with Different Nucleation Layers

• Published in: Materials Vol. 12; no. 24; p. 4050
• Main Authors: Liu, Chuan-Yang, Zhang, Ya-Chao, Xu, Sheng-Rui, Jiang, Li, Zhang, Jin-Cheng, Hao, Yue
• Format: Journal Article
• Language: English
• Published: Switzerland MDPI AG 05.12.2019; MDPI
• Subjects: Aluminum; Aluminum gallium nitrides; Aluminum nitride; Crystal dislocations; Dislocation density; Electrical properties; Gallium nitrides; Heterostructures; Investigations; Metalorganic chemical vapor deposition; Morphology; Nucleation; Organic chemicals; Organic chemistry; Stress propagation; Transport properties; dislocation; sputtered AlN template; AlGaN/GaN heterostructure; stress relief effect
• ISSN: 1996-1944; 1996-1944
• DOI: 10.3390/ma12244050

In this work, a sputtered AlN template is employed to grow high-quality AlGaN/GaN heterostructures, and the effects of AlN nucleation layer growth conditions on the structural and electrical properties of heterostructures are investigated in detail. The optimal growth condition is obtained with composited AlN nucleation layers grown on a sputtered AlN template, resulting in the smooth surface morphology and superior transport properties of the heterostructures. Moreover, high crystal quality GaN material with low dislocation density has been achieved under the optimal condition. The dislocation propagation mechanism, stress relief effect in the GaN grown on sputtered AlN, and metal organic chemical vapor deposition AlN nucleation layers are revealed based on the test results. The results in this work demonstrate the great potential of AlGaN/GaN heterostructures grown on sputtered AlN and composited AlN nucleation layers for microelectronic applications.