Nonlinear theory for epitaxial growth of semiconductor alloys on vicinal surfaces

A set of coupled nonlinear diffusion equations is derived for describing the epitaxial growth of semiconductor alloys on vicinal surfaces. The equations include diffusion and a quadratic interaction term to account for incipient island formation. A criterion is obtained for determining the temperatu...

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Bibliographic Details
Published inSurface science Vol. 240; no. 1; pp. L599 - L603
Main Authors Myers-Beaghton, Andrea K., Vvedensky, Dimitri D.
Format Journal Article
LanguageEnglish
Published Lausanne Elsevier B.V 01.12.1990
Amsterdam Elsevier Science
New York, NY
Subjects
Condensed matter: structure, mechanical and thermal properties
Exact sciences and technology
Physics
Solid surfaces and solid-solid interfaces
Surface and interface dynamics and vibrations
Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties)
Thin film structure and morphology
Crystal growth
Temperature
Semiconductor materials
Epitaxy
Aluminium Gallium Arsenides Mixed
Theoretical study
Step
Inorganic compound
Thin film
Non linear theory
Chemical composition
Diffusion equation
Diffusion
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Summary:A set of coupled nonlinear diffusion equations is derived for describing the epitaxial growth of semiconductor alloys on vicinal surfaces. The equations include diffusion and a quadratic interaction term to account for incipient island formation. A criterion is obtained for determining the temperature T c at which growth becomes dominated by step advancement as a function of alloy composition, substrate temperature, and growth rate. The sensitivity of T c to variations in the interaction parameters is briefly discussed.
ISSN:0039-6028
1879-2758
DOI:10.1016/0039-6028(90)90723-L