Electromigration Resistant Power Delivery Systems

• Published in: IEEE electron device letters Vol. 28; no. 8; pp. 767 - 769
• Main Authors: Sekar, D.C., Dang, B., Davis, J.A., Meindl, J.D.
• Format: Journal Article
• Language: English
• Published: New York, NY IEEE 01.08.2007; Institute of Electrical and Electronics Engineers; The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
• Subjects: Alternating current; Applied sciences; Current density; Delivery systems; Design. Technologies. Operation analysis. Testing; Devices; Direct current; Electromigration; electromigration (EM); Electronic equipment and fabrication. Passive components, printed wiring boards, connectics; Electronics; Exact sciences and technology; flip-chip devices; Frequency; Integrated circuit interconnections; Integrated circuits; Integrated circuits by function (including memories and processors); Mean time to failure; Microprocessors; Packaging; Power system interconnection; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices; Sleep; Solders; Temperature; Wiring; Flip-chip; Power supply; Failures; Integrated circuit bonding; Solder bump; Interconnection; Soldered joint; Integrated circuit; electromigration (EM); flip-chip devices; Electrodiffusion; Microprocessor; Alternating current
• ISSN: 0741-3106; 1558-0563
• DOI: 10.1109/LED.2007.902165

It is well known that electromigration (EM) time-to-failure for ac is several orders of magnitude larger than for dc. We propose a novel technique that reverses current direction in the power delivery system of a microprocessor every time it is rebooted. This improves EM time-to-failure of solder bumps and on-chip global interconnects and vias in the power delivery system.