Analysis compositional homogeneity for MOVPE grown ternary alloys in the horizontal reactor with a rotating susceptor

• Published in: Journal of crystal growth Vol. 193; no. 4; pp. 636 - 640
• Main Authors: Xu, J, Cheng, X.J
• Format: Journal Article
• Language: English
• Published: Amsterdam Elsevier B.V 01.10.1998; Elsevier
• Subjects: Composition and phase identification; Condensed matter: structure, mechanical and thermal properties; Cross-disciplinary physics: materials science; rheology; Exact sciences and technology; Lateral; Materials science; Methods of deposition of films and coatings; film growth and epitaxy; MOVPE; Physics; Rotation; Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties); Thin film structure and morphology; Vapor phase epitaxy; growth from vapor phase; Vertical homogeneity; MOVPE; Rotation; Lateral; Vertical homogeneity; Epitaxial layers; MOVPE method; Digital simulation; Ternary alloys; Homogeneity; Operating mode; Chemical composition; Crystal growth from vapors; Concentration distribution
• ISSN: 0022-0248; 1873-5002
• DOI: 10.1016/S0022-0248(98)00614-9

Using the rotation of the susceptor, the lateral homogeneity of the epilayers can be improved in a horizontal MOVPE-reactor, but the uniformity of the composition along the growth direction has been neither theoretically nor experimentally studied. In this paper the model developed by Xu et al. [J. Crystal Growth 187 (1998) 203] has been applied to discuss both the lateral and vertical homogeneity of ternary alloys grown on the rotating susceptor in a horizontal MOVPE-reactor. The model calculation has revealed that the rotation results in a lateral uniformity, but at the same time it also causes a periodical variation of the composition in the growth direction.