Effect of oxidizing atmosphere on the electrical properties of SrBi4Ti4O15 thin films obtained by the polymeric precursor method

• Published in: Solid state sciences Vol. 10; no. 12; pp. 1951 - 1957
• Main Authors: SIMOES, A. Z, RAMIREZ, M. A, RICCARDI, C. S, LONGO, E, VARELA, J. A
• Format: Journal Article
• Language: English
• Published: Issy-les-Moulineaux Elsevier Masson 01.12.2008
• Subjects: Condensed matter: electronic structure, electrical, magnetic, and optical properties; Condensed matter: structure, mechanical and thermal properties; Dielectric thin films; Dielectrics, piezoelectrics, and ferroelectrics and their properties; Exact sciences and technology; Physics; Single-crystal and powder diffraction; Structure of solids and liquids; crystallography; X-ray diffraction and scattering; Atomic force microscopy; Annealing; X-ray microscopy; Electrical properties; Dielectric properties; Controlled atmospheres; XRD; Precursor; Bismuth Titanates; Switching; Oxidizing atmosphere; CV characteristic; Thin films; Ferroelectricity; Dielectric thin films; Strontium titanates; Spin-on coating; Sol-gel process; Ferroelectric hysteresis
• ISSN: 1293-2558; 1873-3085
• DOI: 10.1016/j.solidstatesciences.2008.03.027

Strontium bismuth titanate (SrBi4Ti4O15) thin films were deposited on (111) Pt/Ti/SiO2/Si substrates by spin coating from the polymeric precursor method. Annealing in static air and dynamic oxygen atmosphere was performed at 700 deg C for 2 h. The films were characterized by X-ray diffraction, atomic force microscopy and electric properties. The dielectric properties of SrBi4Ti4O15 films were found to be remarkably sensitive to the annealing atmosphere. The C-V characteristics of the metal-ferroelectric metal structure showed a typical butterfly loop that confirms the ferroelectric properties of the film related to the domains switching. SrBi4Ti4O15 thin films annealed in oxygen atmosphere showed lower ferroelectric behavior indicating a weak ferroelectricity along c-axis direction.