The novel usage of spectroscopic ellipsometry for the development of amorphous Si solar cells

• Published in: Solar energy materials and solar cells Vol. 95; no. 1; pp. 142 - 145
• Main Authors: Lee, Seung-Yoon, Shim, Jenny H., You, Dong Joo, Ahn, Seh-won, Lee, Heon-Min
• Format: Journal Article Conference Proceeding
• Language: English
• Published: Amsterdam Elsevier B.V 2011; Elsevier
• Subjects: a-Si:H; Applied sciences; Direct energy conversion and energy accumulation; Electrical engineering. Electrical power engineering; Electrical power engineering; Energy; Exact sciences and technology; Natural energy; Photoelectric conversion; Photovoltaic conversion; Solar cells. Photoelectrochemical cells; Solar energy; Spectroscopic ellipsometry (SE); Thin film Si solar cell; Spectroscopic ellipsometry (SE); Thin film Si solar cell; a-Si:H; Solar cell; Silicon solar cells; Amorphous material; Spectroscopic ellipsometry; Thin film cell; Amorphous hydrogenated material; Selenium
• ISSN: 0927-0248; 1879-3398
• DOI: 10.1016/j.solmat.2010.04.054

We present the novel use of spectroscopic ellipsometry (SE) for the development of a-Si:H solar cell. SE is a very fast and useful tool to measure various optical properties of thin film. In the case of a-Si:H thin film analysis, generally, SE is used to estimate the film thickness, roughness, void fraction, optical constants such as ( n, k), and so forth. In this study, optical parameters from SE measurements were analyzed with relation to structural and electrical properties of a-Si:H thin film for solar cell. By analyzing IR absorption spectra and conductivity measurements, it was affirmed that < ε 2> and parameter A by Tauc–Lorentz model fitting of SE data are representative parameters qualifying a-Si:H thin film, and that they have close relationships with FF and light induced degradation property of solar cells. Based on the analysis, solar cells that have i-layers with various E g were optimized. By this research, easier and faster methodology to develop a-Si:H thin film for thin film Si solar cells using SE measurements was established.