Hydride vapour phase epitaxy of GaN on molecular beam epitaxial GaN substrates

We have studied the growth by hydride vapour phase epitaxy (HVPE) of GaN on GaN layers grown by molecular beam epitaxy (MBE) on sapphire and GaAs(1 1 1)B substrates. For growth on the GaN/sapphire composite substrates, the properties of the HVPE GaN are significantly improved as evidenced from X-ray...

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Published inJournal of crystal growth Vol. 187; no. 1; pp. 29 - 34
Main Authors Bel'kov, V.V, Botnaryuk, V.M, Fedorov, L.M, Goncharuk, I.N, Novikov, S.V, Ulin, V.P, Zhilyaev, Yu.V, Cheng, T.S, Jeffs, N.J, Foxon, C.T, Katsavets, N.I, Harrison, I
Format Journal Article
LanguageEnglish
Published Amsterdam Elsevier B.V 01.04.1998
Elsevier
Subjects
Cross-disciplinary physics: materials science; rheology
Exact sciences and technology
Gallium nitride
Hydride vapour phase epitaxy
Materials science
Methods of deposition of films and coatings; film growth and epitaxy
Physics
Vapor phase epitaxy; growth from vapor phase
81.15.Kk
Gallium nitride
81.05.Ea
Hydride vapour phase epitaxy
Buffer layer
Inorganic compounds
Gallium nitrides
Photoluminescence
Binary compounds
VPE
Hydrides
Crystal growth from vapors
XRD
Experimental study
Crystal perfection
Substrates
III-V semiconductors
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Summary:We have studied the growth by hydride vapour phase epitaxy (HVPE) of GaN on GaN layers grown by molecular beam epitaxy (MBE) on sapphire and GaAs(1 1 1)B substrates. For growth on the GaN/sapphire composite substrates, the properties of the HVPE GaN are significantly improved as evidenced from X-ray studies. Growth on GaAs has enabled us to produce thick free-standing layers of GaN which may be suitable as substrates for further epitaxy.
ISSN:0022-0248
1873-5002
DOI:10.1016/S0022-0248(97)00859-2