Microscopic photoluminescence evaluation of bright spots in Fe-doped InP wafers

• Published in: Journal of crystal growth Vol. 210; no. 1; pp. 226 - 229
• Main Authors: Wakahara, M, Uchida, M, Warashina, M, Oda, O, Tajima, M
• Format: Journal Article Conference Proceeding
• Language: English
• Published: Amsterdam Elsevier B.V 01.03.2000; Elsevier
• Subjects: Bright spot; Condensed matter: electronic structure, electrical, magnetic, and optical properties; Exact sciences and technology; Gettering; Iii-v semiconductors; InP; Mapping; Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation; Photoluminescence; Physics; 78.55.Cr; Bright spot; 61.72.Yx; Photoluminescence; InP; Mapping; PL; Gettering; 61.72.Vv; 81.05.Ea; Line intensity; Inorganic compounds; Excitons; Semiconductor materials; Indium phosphides; Doped materials; Iron additions; Experimental study; Dislocations; Deep level
• ISSN: 0022-0248; 1873-5002
• DOI: 10.1016/S0022-0248(99)00684-3

Microscopic non-uniformity of Fe-doped semi-insulating InP wafers has been investigated by photoluminescence spectroscopy and mapping. A deep-level emission with a peak around 1.1 eV appears at 15 K in addition to the band-edge emission due to the exciton recombination at 1.42 eV. An intensity ratio of the 1.1 eV band to the 1.42 eV band is correlated positively with the Fe concentration, suggesting that the 1.1 eV band is associated with Fe. The intensity of the 1.1 eV band decreases at bright spots and lines with an opposite intensity in contrast to the band-edge emission. This gives strong evidence for the idea that the origin of the bright spot and line is an Fe-depleted region where Fe is gettered by defects, most probably dislocations, through their strain field.