Improvement of electron emission characteristics of Si field emitter arrays by surface modification
Photoresist-coated Si field emitter array (FEA) was fabricated with a newly developed fabrication process and well demonstrated. The photoresist was spin-coated on Si FEA and baked at 800°C in a vacuum to evaporate the solvent. After baking, the thickness of the photoresist reduced to 20 nm from the...
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Published in | Applied surface science Vol. 146; no. 1; pp. 172 - 176 |
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Main Authors | , , , |
Format | Journal Article Conference Proceeding |
Language | English |
Published |
Amsterdam
Elsevier B.V
01.05.1999
Elsevier Science |
Subjects | |
Online Access | Get full text |
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Summary: | Photoresist-coated Si field emitter array (FEA) was fabricated with a newly developed fabrication process and well demonstrated. The photoresist was spin-coated on Si FEA and baked at 800°C in a vacuum to evaporate the solvent. After baking, the thickness of the photoresist reduced to 20 nm from the initial thickness of 120 nm. The SiO
x
insulator and the Nb gate electrode were deposited in series by electron-beam evaporation. The FEA structure was made by back etching. The emission current from the photoresist-coated FEA increased from the gate voltage of 40 V and reached 0.5 μA/tip at 65 V. The obtained emission current was more stable than conventional Si FEAs. |
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ISSN: | 0169-4332 1873-5584 |
DOI: | 10.1016/S0169-4332(99)00020-3 |