Improvement of electron emission characteristics of Si field emitter arrays by surface modification

• Published in: Applied surface science Vol. 146; no. 1; pp. 172 - 176
• Main Authors: Ehara, Keigo, Kanemaru, Seigo, Matsukawa, Takashi, Itoh, Junji
• Format: Journal Article Conference Proceeding
• Language: English
• Published: Amsterdam Elsevier B.V 01.05.1999; Elsevier Science
• Subjects: Applied sciences; Condensed matter: electronic structure, electrical, magnetic, and optical properties; Electron and ion emission by liquids and solids; impact phenomena; Electronic tubes, masers; Electronics; Emission stability; Exact sciences and technology; Field emission; Field emitter array; Lithography, masks and pattern transfer; Microelectronic fabrication (materials and surfaces technology); Noise power spectra; Photoresist; Physics; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices; Silicon emitter; Thermionic emission; Vacuum tubes; EE; SF; Noise power spectra; Silicon emitter; Field emitter array; Field emission; Emission stability; FD; Photoresist; Noise spectrum; Field emitter; Stability; Photoresists; Silicon; Experimental study; Display
• ISSN: 0169-4332; 1873-5584
• DOI: 10.1016/S0169-4332(99)00020-3

Photoresist-coated Si field emitter array (FEA) was fabricated with a newly developed fabrication process and well demonstrated. The photoresist was spin-coated on Si FEA and baked at 800°C in a vacuum to evaporate the solvent. After baking, the thickness of the photoresist reduced to 20 nm from the initial thickness of 120 nm. The SiO x insulator and the Nb gate electrode were deposited in series by electron-beam evaporation. The FEA structure was made by back etching. The emission current from the photoresist-coated FEA increased from the gate voltage of 40 V and reached 0.5 μA/tip at 65 V. The obtained emission current was more stable than conventional Si FEAs.