Characterization of 300 mm silicon-polished and EPI wafers

Maturity of 300 mm polished wafers and early epi wafers were evaluated in respects of particles, flatness, metal contamination, and epitaxy thickness. Data of 300 mm polished wafers showed encouraging characteristics comparable to state-of-the-art 200 mm prime wafers. Preliminary characterization of...

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Bibliographic Details
Published inMicroelectronic engineering Vol. 45; no. 2-3; pp. 169 - 182
Main Authors Shih, Steven, Au, Chi, Yang, Zach, Messina, Troy, Goodall, Randal K., Huff, Howard R.
Format Journal Article
LanguageEnglish
Published Amsterdam Elsevier B.V 01.07.1999
Elsevier Science
Subjects
300 mm silicon wafers
Applied sciences
Characterization of silicon wafers
Electronics
Evaluation of wafer maturity
Exact sciences and technology
Microelectronic fabrication (materials and surfaces technology)
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Evaluation of wafer maturity
Characterization of silicon wafers
300 mm silicon wafers
Infrared spectrometry
Defect density
State of the art
Microelectronic fabrication
Polished section
Fourier transformation
Maturity assessment
Silicon
Epitaxial film
Wafer
Thickness measurement
Flatness
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Summary:Maturity of 300 mm polished wafers and early epi wafers were evaluated in respects of particles, flatness, metal contamination, and epitaxy thickness. Data of 300 mm polished wafers showed encouraging characteristics comparable to state-of-the-art 200 mm prime wafers. Preliminary characterization of 300 mm epi wafers revealed that dominant localized light scatterers (LLS) with sizes more than 1 μm were epitaxy growth-related surface or bulk imperfections.
ISSN:0167-9317
1873-5568
DOI:10.1016/S0167-9317(99)00134-3