Strong low-temperature anti-Stokes photoluminescence from coupled silicon nanocrystals

We report efficient low-temperature anti-Stokes photoluminescence (upconverted photoluminescence=UPL) at resonant excitation of coupled silicon nanocrystals (NCs) in porous silicon (PSi). This photoluminescence is absent in strongly oxidized porous silicon and oxidized silicon nanocrystals. The UPL...

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Bibliographic Details
Published inOptical materials Vol. 17; no. 1; pp. 135 - 139
Main Authors Diener, J., Kovalev, D., Heckler, H., Polisski, G., Künzner, N., Koch, F., Efros, Al.L., Rosen, M.
Format Journal Article Conference Proceeding
LanguageEnglish
Published Amsterdam Elsevier B.V 01.06.2001
Elsevier Science
Subjects
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Exact sciences and technology
Nanocrystals and nanoparticles
Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation
Optical properties of specific thin films
Photoluminescence
Physics
Porous materials
Porous silicon
Porous silicon
Photoluminescence
Auger effect
Porous materials
Frequency conversion
Electron hole pair
Excitation spectrum
Resonance
Silicon
Experimental study
Antistokes lines
Nanocrystal
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Summary:We report efficient low-temperature anti-Stokes photoluminescence (upconverted photoluminescence=UPL) at resonant excitation of coupled silicon nanocrystals (NCs) in porous silicon (PSi). This photoluminescence is absent in strongly oxidized porous silicon and oxidized silicon nanocrystals. The UPL is a result of resonant excitation of electron–hole (e–h) pairs spatially separated in neighboring crystals with different band-gap. It is generated by the excitation of a second e–h pair in the larger of the two crystals and Auger ejection of a carrier into the smaller one, with the larger band-gap.
ISSN:0925-3467
1873-1252
DOI:10.1016/S0925-3467(01)00036-2