Investigation of the Range Distribution of Yb Ions Implanted in SOI

The mean projected ranges and range straggling for energetic 200 500 keV Yb ions implanted in silicon-on-insulator (SOI) were measured by means of Rutherford backscattering followed by spectrum analysis. The measured values are compared with Monte Carlo code (SRIM2012) calculations. It has been foun...

Full description

Saved in:
Bibliographic Details
Published inApplied Mechanics and Materials Vol. 488-489; no. Materials Science, Civil Engineering and Architecture Science, Mechanical Engineering and Manufacturing Technology; pp. 269 - 272
Main Authors Fu, Gang, Qin, Xi Feng, Shi, Shu Hua, Ma, Gui Jie
Format Journal Article
LanguageEnglish
Published Zurich Trans Tech Publications Ltd 01.01.2014
Subjects
Accuracy
Backscattering
Mathematical analysis
Monte Carlo methods
Reinforced reaction injection molding
Spectrum analysis
SOI
Yb Ion Implantation
Range Distribution
Rutherford Backscattering Technique
Online AccessGet full text

Cover

More Information
Summary:The mean projected ranges and range straggling for energetic 200 500 keV Yb ions implanted in silicon-on-insulator (SOI) were measured by means of Rutherford backscattering followed by spectrum analysis. The measured values are compared with Monte Carlo code (SRIM2012) calculations. It has been found that the measured values of the mean projected range are good agreement with the SRIM calculated values; for the range straggling , the difference between the experiment data and the calculated results is much higher than that of .
Bibliography:Selected, peer reviewed papers from the 2014 International Conference on Advanced Engineering Materials and Architecture Science (ICAEMAS 2014), January 4-5, 2014, Xi’an, Shaanxi, China
ObjectType-Article-2
SourceType-Scholarly Journals-1
ObjectType-Feature-1
content type line 23
ISBN:3037859768
9783037859766
ISSN:1660-9336
1662-7482
1662-7482
DOI:10.4028/www.scientific.net/AMM.488-489.269