High-Characteristic-Temperature 1.3-$\mu$m-Band Laser on an InGaAs Ternary Substrate Grown by the Traveling Liquidus-Zone Method

We have developed high-performance 1.3-mum-band laser diodes on an InGaAs ternary substrate with a low indium content (In:0.1) grown by a novel bulk crystal growth technique called the traveling liquidus-zone (TLZ) method. This laser has a long-wavelength lasing of 1.28 mum and provides lasing opera...

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Published inIEEE journal of selected topics in quantum electronics Vol. 13; no. 5; pp. 1295 - 1301
Main Authors Arai, M, Watanabe, T, Yuda, M, Kinoshita, K, Yoda, S, Kondo, Y
Format Journal Article
LanguageEnglish
Published 01.01.2007
Subjects
Crystal growth
Indium
Indium gallium arsenides
Lasers
Lasing
Quantum electronics
Quantum wells
Wavelengths
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Summary:We have developed high-performance 1.3-mum-band laser diodes on an InGaAs ternary substrate with a low indium content (In:0.1) grown by a novel bulk crystal growth technique called the traveling liquidus-zone (TLZ) method. This laser has a long-wavelength lasing of 1.28 mum and provides lasing operation up to 195degC by using a highly strained InGaAs quantum well. The characteristic temperatures are 130 K from 25 to 95degC and 95 K from 95 to 155degC. We investigated junction heating by comparing the lasing wavelengths for pulsed and continuous-wave (CW) operation. And, we showed the possibility of realizing a high-performance laser on an InGaAs ternary substrate.
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ISSN:1077-260X
1558-4542
DOI:10.1109/JSTQE.2007.903850