A red europium (III) ternary complex for InGaN-based light-emitting diode

• Published in: Journal of luminescence Vol. 130; no. 1; pp. 35 - 37
• Main Authors: Wang, Zhengliang, Xiang, Nengjun, Wang, Qin, Zhang, Guangqiu, Gong, Menglian
• Format: Journal Article
• Language: English
• Published: Amsterdam Elsevier B.V 2010; Elsevier
• Subjects: Chemical synthesis; Condensed matter: electronic structure, electrical, magnetic, and optical properties; Europium (III) ternary complex; Exact sciences and technology; Light-emitting diode; Luminescence; Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation; Photoluminescence; Physics; Thermogravimetric analysis; 78.55.Kz; 81.05.Lg; Europium (III) ternary complex; 42.70.a; Thermogravimetric analysis; Luminescence; 81.20.Ka; Chemical synthesis; Light-emitting diode; Photoluminescence; Thermogravimetry; Organic ligand; Light emitting diodes; Diketone; Quantum yield; Europium complexes; Thermal stability; Ultraviolet radiation; Phenanthrolines
• ISSN: 0022-2313; 1872-7883
• DOI: 10.1016/j.jlumin.2009.07.011

One kind of europium (III) ternary complex was synthesized, and its photoluminescence properties were investigated. This complex exhibits broad excitation band in near-UV range, and strong red emission which is due to the 5D 0– 7F j transitions of Eu 3+ ions. The luminescence quantum yield for the Eu 3+ complex is 0.17. Thermogravimetric analysis confirms a high thermal stability of the complex with a decomposition temperature of 344 °C. All the characteristics indicate that the Eu 3+ complex is a highly efficient red phosphor suitable to be excited by near UV light. An intense red light-emitting diode was fabricated by combining the europium (III) ternary complex with a ~395 nm-emitting InGaN chip.