Lateral overgrowth and epitaxial lift-off of InP by halide vapor-phase epitaxy

• Published in: Journal of crystal growth Vol. 187; no. 2; pp. 185 - 193
• Main Authors: Park, J, Barnes, P.A, Tin, C.C, Allerman, A.A
• Format: Journal Article
• Language: English
• Published: Amsterdam Elsevier B.V 01.05.1998; Elsevier
• Subjects: CLEFT; Cross-disciplinary physics: materials science; rheology; Epitaxial lift-off; Exact sciences and technology; Halide VPE; Lateral overgrowth; Materials science; Methods of deposition of films and coatings; film growth and epitaxy; Physics; Vapor phase epitaxy; growth from vapor phase; 81.15.Kk; Lateral overgrowth; CLEFT; Halide VPE; Epitaxial lift-off; Patterning; Inorganic compounds; Epitaxial layers; Semiconductor materials; Crystal orientation; Surfaces; Binary compounds; VPE; Crystal growth from vapors; Step; Experimental study; Lateral growth; Precursor; Substrates; Selective growth; Halides; Indium phosphides; Growth mechanism; Masking
• ISSN: 0022-0248; 1873-5002
• DOI: 10.1016/S0022-0248(97)00870-1

The orientation dependence of lateral overgrowth and vertical growth of InP deposits selectively grown through stripe openings in a phosphosilicate glass mask was investigated using halide vapor-phase epitaxy. The lateral overgrowth was observed to be strongly dependent on the orientation of stripe openings, and the vertical growth was shown to be inversely correlated to the lateral overgrowth. For a sufficiently long growth time, the growth fronts of lateral overgrowth layers from adjacent stripe openings merged together to form a completely overgrown layer. The morphology of the region where the growth fronts are merged was shown to be dependent on the orientation of stripe openings through which the growth was seeded. We also investigated a method to separate the completely overgrown layer from the substrate. This mechanical epitaxial lift-off technique may be used for hybrid integration of optoelectronic and electronic devices.