Accurate modelling of 3D-trench silicon sensor with enhanced timing performance and comparison with test beam measurements

Abstract This paper presents the detailed simulation of a double-pixel structure for charged particle detection based on the 3D-trench silicon sensor developed for the TIMESPOT project and a comparison of the simulation results with measurements performed at the π-M1 beam at PSI laboratory. The simu...

Full description

Saved in:
Bibliographic Details
Published inJournal of instrumentation Vol. 16; no. 9; p. P09028
Main Authors Brundu, D., Cardini, A., Contu, A., Cossu, G.M., Dalla Betta, G.-F., Garau, M., Lai, A., Lampis, A., Loi, A., Obertino, M.M., Siddi, B.G., Vecchi, S.
Format Journal Article
LanguageEnglish
Published Bristol IOP Publishing 01.09.2021
Subjects
Charged particles
Computing time
Parallel processing
Sensors
Signal processing
Silicon
Simulation
Software
Software development tools
Three dimensional models
Online AccessGet full text

Cover

More Information
Summary:Abstract This paper presents the detailed simulation of a double-pixel structure for charged particle detection based on the 3D-trench silicon sensor developed for the TIMESPOT project and a comparison of the simulation results with measurements performed at the π-M1 beam at PSI laboratory. The simulation is based on the combined use of several software tools (TCAD, GEANT4, TCoDe and TFBoost) which allow to fully design and simulate the device physics response in very short computational time, O(1–100 s) per simulated signal, by exploiting parallel computation using single or multi-thread processors. This allowed to produce large samples of simulated signals, perform detailed studies of the sensor characteristics and make precise comparisons with experimental results.
ISSN:1748-0221
1748-0221
DOI:10.1088/1748-0221/16/09/P09028