Low loss static induction devices (transistors and thyristors)

To decrease the power loss, a current gain of a bipolar mode Static Induction Transistor (BSIT) is examined with quasi-one-dimensional analysis. The current gain dependence on source contact area is presented with experimental, analyzed and simulated results. Concerning Static Induction Thyristor (S...

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Bibliographic Details
Published inMicroelectronics and reliability Vol. 37; no. 9; pp. 1389 - 1396
Main Authors Tadano, H., Ishiko, M., Kawaji, S., Taga Toyota, Y.
Format Journal Article Conference Proceeding
LanguageEnglish
Published Oxford Elsevier Ltd 01.09.1997
Elsevier
Subjects
Applied sciences
Electronics
Exact sciences and technology
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Transistors
Waveform
Energy loss
Reduction
Switching conditions
Process improvement
Thyristor
Proton irradiation
Static induction transistor
Production process
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Summary:To decrease the power loss, a current gain of a bipolar mode Static Induction Transistor (BSIT) is examined with quasi-one-dimensional analysis. The current gain dependence on source contact area is presented with experimental, analyzed and simulated results. Concerning Static Induction Thyristor (SIThy), the switching speed improvement methods are presented to reduce the switching loss of device. A proton irradiation, or a shorting method is a useful technique to decrease the switching time and switching loss of SIThy.
ISSN:0026-2714
1872-941X
DOI:10.1016/S0026-2714(97)00010-3