Control of the graphene growth rate on capped SiC surface under strong Si confinement

• Published in: Applied surface science Vol. 264; pp. 56 - 60
• Main Authors: Çelebi, C., Yanık, C., Demirkol, A.G., Kaya, İsmet İ.
• Format: Journal Article
• Language: English
• Published: Amsterdam Elsevier B.V 01.01.2013; Elsevier
• Subjects: Condensed matter: electronic structure, electrical, magnetic, and optical properties; Condensed matter: structure, mechanical and thermal properties; Cross-disciplinary physics: materials science; rheology; Epitaxial graphene; Exact sciences and technology; Physics; Raman spectroscopy; SiC; SiC; Raman spectroscopy; Epitaxial graphene; Raman spectra; Silicon carbide; Inorganic compounds; Growth rate; Silicon
• ISSN: 0169-4332; 1873-5584
• DOI: 10.1016/j.apsusc.2012.09.103

► Graphene is grown on capped SiC surface with well defined cavity size. ► Graphene growth rate linearly increases with the cavity height. ► Graphene uniformity is reduced with thickness. The effect of the degree of Si confinement on the thickness and morphology of UHV grown epitaxial graphene on (000−1) SiC is investigated by using atomic force microscopy and Raman spectroscopy measurements. Prior to the graphene growth process, the C-face surface of a SiC substrate is capped by another SiC comprising three cavities on its Si-rich surface with depths varying from 0.5 to 2 microns. The Si atoms, thermally decomposed from the sample surface during high temperature annealing of the SiCcap/SiCsample stack, are separately trapped inside these individual cavities at the sample/cap interface. Our analyses show that the growth rate linearly increases with the cavity height. It was also found that stronger Si confinement yields more uniform graphene layers.