Active Switching of Extremely High-Q Fano Resonances Using Vanadium Oxide-Implanted Terahertz Metamaterials

In this paper, we demonstrate an active switching of extremely high Q-factor Fano resonances using vanadium oxide (VO2)-implanted THz asymmetric double C-shaped metamaterial (MM) structures. The simulation results indicate the highly temperature-sensitive nature of the double Fano resonances that ca...

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Bibliographic Details
Published inApplied sciences Vol. 10; no. 1; p. 330
Main Authors Ma, Jing, Wang, Zhi-Hang, Liu, Huan, Fan, Ya-Xian, Tao, Zhi-Yong
Format Journal Article
LanguageEnglish
Published MDPI AG 01.01.2020
Subjects
fano resonances
metamaterials
switching
terahertz
thermal control
vanadium dioxide
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Summary:In this paper, we demonstrate an active switching of extremely high Q-factor Fano resonances using vanadium oxide (VO2)-implanted THz asymmetric double C-shaped metamaterial (MM) structures. The simulation results indicate the highly temperature-sensitive nature of the double Fano resonances that can be switched at very low external thermal pumping (68 °C), which is only slightly higher than room temperature. We employ the surface current and electric field distributions of the structure to analyze the physical mechanism of the observed switching behavior in the thermally excited Fano MMs. More importantly, by optimizing the asymmetric parameter (offset length), the linewidth of the Fano resonance can reach only 0.015 THz and the Q-factor is as high as 98, which is one order of magnitude higher than that of the traditional MMs. The findings of this work would enable a thermally-induced high-Q Fano resonance MMs for ultra-sensitive sensors, modulators, low threshold switching in metadevices.
ISSN:2076-3417
2076-3417
DOI:10.3390/app10010330