Electrically reduced graphene oxide for photovoltaic application

We report Electrically reduced graphene oxide (GO) and n-type Si heterostructure junction-based photovoltaic cell. The transition of the insulating properties of GO to that of semi-conducting was achieved by applying electric voltages using 5, 10, and 15 V biasing. The photovoltaic device I–V charac...

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Bibliographic Details
Published inJournal of materials research Vol. 34; no. 4; pp. 652 - 660
Main Authors Singh, Arun, Sharma, Neeraj, Arif, Mohd, Katiyar, Ram S.
Format Journal Article
LanguageEnglish
Published New York, USA Cambridge University Press 28.02.2019
Springer International Publishing
Springer Nature B.V
Subjects
Applied and Technical Physics
Biomaterials
Biosensors
Carbon
Energy
Fourier transforms
Functional groups
Graphene
Heterostructures
Infrared spectroscopy
Inorganic Chemistry
Materials Engineering
Materials research
Materials Science
Nanotechnology
Optical properties
Optics
Photovoltaic cells
Reduction
Researchers
Scanning electron microscopy
Thin films
Transistors
Ultraviolet radiation
X-ray diffraction
graphene oxide
voltage reduction
photovoltaic cell
SEM
UV-vis
XRD
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Summary:We report Electrically reduced graphene oxide (GO) and n-type Si heterostructure junction-based photovoltaic cell. The transition of the insulating properties of GO to that of semi-conducting was achieved by applying electric voltages using 5, 10, and 15 V biasing. The photovoltaic device I–V characteristics corresponding to the increasing (5–15 V) reduction voltages, obtained on exposure of 25 mW/cm2 visible light, showed approximately same fill factor with increased efficiency. The maximum efficiency of 1.12% was observed under ultraviolet light exposure for photovoltaic cell consisting GO reduced using 15 V reduction voltage. GO was synthesized using the modified Hummers’ technique and characterized by X-ray diffraction (XRD), ultraviolet–visible (UV-Vis) spectroscopy, Fourier transform infrared (FTIR) spectroscopy, and scanning electron microscopy (SEM). The GO characteristic XRD peak corresponding to plane (001) was observed at 9.16°. The UV-Vis spectrum for GO displayed an absorption peak at 228.5 nm, and the corresponding Tauc plot analysis provided a band gap of 4.74 eV. The FTIR analysis showed presence of C=O (1713 cm−1), C=C (1627 cm−1), C–OH (1418 cm−1), C–O–C (1252 cm−1), C–O (1030 cm−1), and C–H (827 cm−1) functional groups in GO.
ISSN:0884-2914
2044-5326
DOI:10.1557/jmr.2019.32