XPS investigation of a-Si : H thin films after light soaking

• Published in: Journal of luminescence Vol. 80; no. 1; pp. 455 - 459
• Main Authors: Toneva, A, Marinova, Ts, Krastev, V
• Format: Journal Article Conference Proceeding
• Language: English
• Published: Amsterdam Elsevier B.V 01.12.1998; Elsevier
• Subjects: Amorphous silicon; Binding energy; Condensed matter: electronic structure, electrical, magnetic, and optical properties; Disordered structures; Electron and ion emission by liquids and solids; impact phenomena; Exact sciences and technology; Micropore; Photoemission and photoelectron spectra; Physics; Thin film; XPS; Micropore; 7960; 7280.N; Binding energy; Amorphous silicon; XPS; 6855; Thin film; Amorphous state; X-ray spectroscopy; Experimental study; Photoelectron spectroscopy; Thin films; Microporosity; Hydrogen bonds; Amorphous hydrogenated material; Hydrogen additions; Chemical bonds; Illumination; Silicon; Diffusion
• ISSN: 0022-2313; 1872-7883
• DOI: 10.1016/S0022-2313(98)00147-1

Amorphous hydrogenated silicon thin films prepared by homogeneous chemical vapour deposition have been studied. The Si2p, O1s and C1s electron spectra have been recorded after different light soaking times using repeated 100 mW/cm 2 white light illumination and X-ray photoelectron spectroscopy (XPS) measurements. The change of the position and intensity of the Si2p peak has been observed after light soaking and is explained by the transformation of the Si–H bonds. The correlation between the micropore density in a-Si : H film and the binding energy of Si2p electrons is demonstrated.