Optical switching at ZnSe–Ga interfaces via nanoscale light-induced metallisation

A structural transformation induced by optical impulse excitation of only a few mJ/cm2 fluence affecting the nanoscale surface melt layer of gallium at a ZnSe–gallium interface leads to a fast, substantial and fully reversible change in reflectivity of up to 50%. Recovery occurs within a few μs afte...

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Bibliographic Details
Published inOptics communications Vol. 254; no. 4-6; pp. 340 - 343
Main Authors Woodford, M., MacDonald, K.F., Stevens, G.C., Zheludev, N.I.
Format Journal Article
LanguageEnglish
Published Amsterdam Elsevier B.V 15.10.2005
Elsevier Science
Subjects
Exact sciences and technology
Fundamental areas of phenomenology (including applications)
Nonlinear optics
Nonlinear optics at surfaces
Optical bistability, multistability and switching, including local field effects
Optical nonlinearities of condensed matter
Optics
Physics
190.4720
Optical nonlinearities of condensed matter
190.4350
Nonlinear optics at surfaces
Reflectivity
190.4720 Nonlinear optics at surfaces
Gallium
II-VI semiconductors
Optical switching
Metallizing
Binary compounds
Photoinduced effect
Zinc selenides
Nonlinear optics
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Summary:A structural transformation induced by optical impulse excitation of only a few mJ/cm2 fluence affecting the nanoscale surface melt layer of gallium at a ZnSe–gallium interface leads to a fast, substantial and fully reversible change in reflectivity of up to 50%. Recovery occurs within a few μs after excitation is withdrawn and less than 1μs at temperatures more than 4K below gallium’s melting point.
ISSN:0030-4018
1873-0310
DOI:10.1016/j.optcom.2005.05.047