Epitaxial growth of high quality ZnSe and ZnSe/ZnS superlattices for optical processing

The influence of processing conditions, such as reagent flow ratio (fVI/fII) and substrate temperature, on the film stoichiometry, surface morphology, and crystalline quality of MOCVD grown ZnSe films and ZnSe/ZnS superlattices (SLs) has been studied. A growth interruption procedure was developed wh...

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Bibliographic Details
Published inJournal of crystal growth Vol. 128; no. 1-4; pp. 650 - 654
Main Authors Pong, Chungdee, Feigelson, Robert S., DeMattei, Robert C.
Format Journal Article Conference Proceeding
LanguageEnglish
Published Amsterdam Elsevier B.V 01.03.1993
Elsevier
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Summary:The influence of processing conditions, such as reagent flow ratio (fVI/fII) and substrate temperature, on the film stoichiometry, surface morphology, and crystalline quality of MOCVD grown ZnSe films and ZnSe/ZnS superlattices (SLs) has been studied. A growth interruption procedure was developed which effectively reduced the interface roughness of ZnSe/ZnS superlattices, and hence the photoluminescence (PL) linewidth of the superlattice structures.
ISSN:0022-0248
1873-5002
DOI:10.1016/S0022-0248(07)80017-0