Epitaxial growth of high quality ZnSe and ZnSe/ZnS superlattices for optical processing
The influence of processing conditions, such as reagent flow ratio (fVI/fII) and substrate temperature, on the film stoichiometry, surface morphology, and crystalline quality of MOCVD grown ZnSe films and ZnSe/ZnS superlattices (SLs) has been studied. A growth interruption procedure was developed wh...
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Published in | Journal of crystal growth Vol. 128; no. 1-4; pp. 650 - 654 |
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Main Authors | , , |
Format | Journal Article Conference Proceeding |
Language | English |
Published |
Amsterdam
Elsevier B.V
01.03.1993
Elsevier |
Subjects | |
Online Access | Get full text |
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Summary: | The influence of processing conditions, such as reagent flow ratio (fVI/fII) and substrate temperature, on the film stoichiometry, surface morphology, and crystalline quality of MOCVD grown ZnSe films and ZnSe/ZnS superlattices (SLs) has been studied. A growth interruption procedure was developed which effectively reduced the interface roughness of ZnSe/ZnS superlattices, and hence the photoluminescence (PL) linewidth of the superlattice structures. |
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ISSN: | 0022-0248 1873-5002 |
DOI: | 10.1016/S0022-0248(07)80017-0 |