All porous silicon microcavities: growth and physics

• Published in: Journal of luminescence Vol. 80; no. 1; pp. 43 - 52
• Main Authors: Pavesi, L., Mulloni, V.
• Format: Journal Article Conference Proceeding
• Language: English
• Published: Amsterdam Elsevier B.V 01.12.1998; Elsevier
• Subjects: Applied sciences; Condensed matter: electronic structure, electrical, magnetic, and optical properties; Electronics; Exact sciences and technology; Fundamental areas of phenomenology (including applications); Light-emitting devices; Microcavity; Multilayer; Optical elements, devices, and systems; Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation; Optics; Optoelectronic devices; Photoluminescence; Physics; Porous materials; Porous silicon; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices; 42.25.Hz; 81.05.Rm; 78.20.−e; 77.55.+f; Multilayer; Porous silicon; Microcavity; Temperature dependence; Porous materials; Electroluminescent devices; Photoluminescence; Experimental study; Dielectric function; Time resolution; Optical microcavity; Spontaneous emission; Reflection spectrum; Transfer matrix method; Excitation spectrum; Modelling; Silicon; Application
• ISSN: 0022-2313; 1872-7883
• DOI: 10.1016/S0022-2313(98)00069-6

The spontaneous emission of a material can be controlled by placing it in a micron-sized optical cavity. In this paper we introduce the subject and we discuss the realization, the physics and perspective applications of all porous silicon microcavities. The emission properties of the cavities have been characterized as a function of the temperature, of the excitation power and of the response time. Coupled microcavities are demonstrated. Modeling of the structure have been performed on the basis of a transfer matrix approximation.