An X-ray diffraction study of direct-bonded silicon interfaces: A model semiconductor grain boundary
Semiconductor wafer bonding techniques have been used to create a giant twist grain boundary from two Si(0 0 1) wafers. We show, using X-ray diffraction measurements that after annealing the interface forms a highly ordered superstructure with relaxations extending to many layers into the crystals o...
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Published in | Physica. B, Condensed matter Vol. 248; no. 1; pp. 74 - 78 |
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Main Authors | , , , , , , |
Format | Journal Article Conference Proceeding |
Language | English |
Published |
Amsterdam
Elsevier B.V
01.06.1998
Elsevier |
Subjects | |
Online Access | Get full text |
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