An X-ray diffraction study of direct-bonded silicon interfaces: A model semiconductor grain boundary

• Published in: Physica. B, Condensed matter Vol. 248; no. 1; pp. 74 - 78
• Main Authors: Howes, P.B., Benamara, M., Grey, F., Feidenhansl, R., Nielsen, M., Rasmussen, F.B., Baker, J.
• Format: Journal Article Conference Proceeding
• Language: English
• Published: Amsterdam Elsevier B.V 01.06.1998; Elsevier
• Subjects: Condensed matter: structure, mechanical and thermal properties; Defects and impurities in crystals; microstructure; Exact sciences and technology; Grain and twin boundaries; Physics; Semiconductors; Solid surfaces and solid-solid interfaces; Structure of solids and liquids; crystallography; Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties); Twist grain boundaries; X-ray diffraction; Semiconductors; X-ray diffraction; Twist grain boundaries; Wafer bonding; Interfaces; Grain boundaries; Semiconductor materials; Twist boundaries; Theoretical study; Silicon; XRD

Semiconductor wafer bonding techniques have been used to create a giant twist grain boundary from two Si(0 0 1) wafers. We show, using X-ray diffraction measurements that after annealing the interface forms a highly ordered superstructure with relaxations extending to many layers into the crystals o...