An X-ray diffraction study of direct-bonded silicon interfaces: A model semiconductor grain boundary

Semiconductor wafer bonding techniques have been used to create a giant twist grain boundary from two Si(0 0 1) wafers. We show, using X-ray diffraction measurements that after annealing the interface forms a highly ordered superstructure with relaxations extending to many layers into the crystals o...

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Bibliographic Details
Published inPhysica. B, Condensed matter Vol. 248; no. 1; pp. 74 - 78
Main Authors Howes, P.B., Benamara, M., Grey, F., Feidenhansl, R., Nielsen, M., Rasmussen, F.B., Baker, J.
Format Journal Article Conference Proceeding
LanguageEnglish
Published Amsterdam Elsevier B.V 01.06.1998
Elsevier
Subjects
Condensed matter: structure, mechanical and thermal properties
Defects and impurities in crystals; microstructure
Exact sciences and technology
Grain and twin boundaries
Physics
Semiconductors
Solid surfaces and solid-solid interfaces
Structure of solids and liquids; crystallography
Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties)
Twist grain boundaries
X-ray diffraction
Semiconductors
X-ray diffraction
Twist grain boundaries
Wafer bonding
Interfaces
Grain boundaries
Semiconductor materials
Twist boundaries
Theoretical study
Silicon
XRD
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Summary:Semiconductor wafer bonding techniques have been used to create a giant twist grain boundary from two Si(0 0 1) wafers. We show, using X-ray diffraction measurements that after annealing the interface forms a highly ordered superstructure with relaxations extending to many layers into the crystals on either side of the interface.
ISSN:0921-4526
1873-2135
DOI:10.1016/S0921-4526(98)00206-3