Effect of p+-contact parameters on subterahertz and terahertz ballistic current oscillations for quantized holes with negative effective masses

• Published in: Microelectronic engineering Vol. 43-44; pp. 445 - 451
• Main Authors: Korshak, A.N, Gribnikov, Z.S, Vagidov, N.Z, Kozlovsky, S.I, Mitin, V.V
• Format: Journal Article Conference Proceeding
• Language: English
• Published: Amsterdam Elsevier B.V 01.08.1998; Elsevier Science
• Subjects: Applied sciences; Condensed matter: electronic structure, electrical, magnetic, and optical properties; Design. Technologies. Operation analysis. Testing; Electrical properties of specific thin films; Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures; Electronics; Exact sciences and technology; Hole quantum well; Iii-v semiconductors; Integrated circuits; Negative effective mass; Physics; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices; Terahertz generation; Hole quantum well; Terahertz generation; Negative effective mass; Quantum well; Ballistic diode; Microelectronic fabrication; Electric field; Voltage current curve; Fermi level; Oscillation frequency; Dispersion relation; Integrated circuit; Poisson equation; Effective mass
• ISSN: 0167-9317; 1873-5568
• DOI: 10.1016/S0167-9317(98)00204-4

A space–charge limited ballistic current of quantized holes in a short doped p-GaAs quantum well generates current oscillations. This generation is a result of a negative effective mass region in the hole dispersion relation. An oscillation frequency depends on the parameters of the diode structure with quantum well as a base, and is in subterahertz and terahertz ranges. It is determined by a longitudinal mode of a selftuning plasma cavity in the diode base which depends on a Fermi energy of holes emitted by the p+-anode and cathode into the base. The best oscillation generation regime is achieved at some optimum value of the Fermi energy.