Ag–N doped ZnO film and its p–n junction fabricated by ion beam assisted deposition

• Published in: Applied surface science Vol. 256; no. 7; pp. 2289 - 2292
• Main Authors: Yan, Zhi, Ma, Youpeng, Deng, Peiran, Yu, Zhishui, Liu, Cheng, Song, Zhitang
• Format: Journal Article
• Language: English
• Published: Amsterdam Elsevier B.V 15.01.2010; Elsevier
• Subjects: Cold working, work hardening; annealing, post-deformation annealing, quenching, tempering recovery, and crystallization; Cold working, work hardening; annealing, quenching, tempering, recovery, and recrystallization; textures; Condensed matter: electronic structure, electrical, magnetic, and optical properties; Cross-disciplinary physics: materials science; rheology; Electrical properties; Electrical properties of specific thin films; Electrical properties of specific thin films and layer structures (multilayers, superlattices, quantum wells, wires, and dots); Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures; Exact sciences and technology; Ion and electron beam-assisted deposition; ion plating; Ion beam technology; Materials science; Methods of deposition of films and coatings; film growth and epitaxy; Physics; Semiconductors; Thin films; Treatment of materials and its effects on microstructure and properties; Thin films; Ion beam technology; Semiconductors; Electrical properties; Rectification; Annealing; Inorganic compounds; Electrical conductivity; Hall mobility; Transition element compounds; Doped materials; Silver additions; Film growth; Ion beams; Growth from vapor; p type semiconductor; p n junctions; n type semiconductor; Zinc oxide; Nitrogen additions; IV characteristic; Carrier density; Homojunctions
• ISSN: 0169-4332; 1873-5584
• DOI: 10.1016/j.apsusc.2009.10.054

Ag–N doped ZnO film was synthesized by ion beam assisted deposition and its electrical properties and annealing property were investigated. The films remained p-type even after annealing at 400 °C in air for 10 min. While the annealing temperature went up to 500 °C, the conduction type of these films shifted from p-type to n-type. The p-type ZnO film revealed low resistivity (0.0016 Ω cm), low Hall mobility (0.65 cm 2 V −1 s −1) and high carrier concentration (5.8 × 10 20 cm −3). ZnO p–n homojunction consisting of a p-type layer (Ag–N doped ZnO film) and an n-type layer (In-doped ZnO film) had been fabricated by ion beam assisted deposition. With electrical measurement, its current–voltage curve had a typical rectifying characteristic with current rectification ratio of 25 at bias ±5 V and a reverse current of 0.01 mA at −5 V. The depletion width was estimated 3.8 nm by using p–n junction equation.