Nature of semiconductor-to-metal transition and volume properties of bulk tetrahedral amorphous GaSb and GaSb-Ge semiconductors under high pressure

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Bibliographic Details
Published inPhysical review letters Vol. 73; no. 24; p. 3262
Main Authors Sidorov, VA, Brazhkin, VV, Khvostantsev, LG, Lyapin, AG, Sapelkin, AV, Tsiok, OB
Format Journal Article
LanguageEnglish
Published United States 12.12.1994
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ISSN:1079-7114
DOI:10.1103/PhysRevLett.73.3262