Properties of HgCdTe films obtained by laser deposition on a sapphire

Films of HgCdTe have been obtained by pulsed laser deposition (PLD) using: Nd:YAG pulse laser (40 ns, 1 J/pulse, λ=1.06 μm) and XeCl excimer laser (25 ns, 150 mJ/pulse, λ=0.308 μm). Layers were deposited on monocrystalline and amorphous surfaces of Al 2O 3. Samples were obtained when the substrate t...

Full description

Saved in:
Bibliographic Details
Published inApplied surface science Vol. 177; no. 3; pp. 201 - 206
Main Authors Virt, I.S, Bester, M, Dumański, Ł, Kuźma, M, Rudyj, I.O, Frugynskyi, M.S, Kurilo, I.V
Format Journal Article
LanguageEnglish
Published Amsterdam Elsevier B.V 08.06.2001
Elsevier Science
Subjects
Online AccessGet full text

Cover

Loading…
More Information
Summary:Films of HgCdTe have been obtained by pulsed laser deposition (PLD) using: Nd:YAG pulse laser (40 ns, 1 J/pulse, λ=1.06 μm) and XeCl excimer laser (25 ns, 150 mJ/pulse, λ=0.308 μm). Layers were deposited on monocrystalline and amorphous surfaces of Al 2O 3. Samples were obtained when the substrate temperature was 300 and 500 K. Monocrystalline Hg 1− x Cd x Te ( x=0.2) were used as a target. A thickness of layers obtained was in the range of 0.05–0.5 μm, depending on a type of laser used and on a number of shots. Surface morphology was investigated by electron scanning microscopy. The chemical composition of layers was determined by X-ray micro-analyses. The samples obtained were of good homogeneity and they reflected well the composition of the target. The structural properties of the samples were compared with results of the electrophysical measurements.
ISSN:0169-4332
1873-5584
DOI:10.1016/S0169-4332(01)00232-X