Properties of HgCdTe films obtained by laser deposition on a sapphire
Films of HgCdTe have been obtained by pulsed laser deposition (PLD) using: Nd:YAG pulse laser (40 ns, 1 J/pulse, λ=1.06 μm) and XeCl excimer laser (25 ns, 150 mJ/pulse, λ=0.308 μm). Layers were deposited on monocrystalline and amorphous surfaces of Al 2O 3. Samples were obtained when the substrate t...
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Published in | Applied surface science Vol. 177; no. 3; pp. 201 - 206 |
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Main Authors | , , , , , , |
Format | Journal Article |
Language | English |
Published |
Amsterdam
Elsevier B.V
08.06.2001
Elsevier Science |
Subjects | |
Online Access | Get full text |
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Summary: | Films of HgCdTe have been obtained by pulsed laser deposition (PLD) using: Nd:YAG pulse laser (40
ns, 1
J/pulse,
λ=1.06
μm) and XeCl excimer laser (25
ns, 150
mJ/pulse,
λ=0.308
μm). Layers were deposited on monocrystalline and amorphous surfaces of Al
2O
3. Samples were obtained when the substrate temperature was 300 and 500
K. Monocrystalline Hg
1−
x
Cd
x
Te (
x=0.2) were used as a target. A thickness of layers obtained was in the range of 0.05–0.5
μm, depending on a type of laser used and on a number of shots. Surface morphology was investigated by electron scanning microscopy. The chemical composition of layers was determined by X-ray micro-analyses. The samples obtained were of good homogeneity and they reflected well the composition of the target. The structural properties of the samples were compared with results of the electrophysical measurements. |
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ISSN: | 0169-4332 1873-5584 |
DOI: | 10.1016/S0169-4332(01)00232-X |