Silicon diode temperature sensor without a kink of the response curve in cryogenic temperature region

• Published in: Sensors and actuators. A, Physical Vol. 76; no. 1; pp. 107 - 111
• Main Authors: Shwarts, Yu.M., Borblik, V.L., Kulish, N.R., Sokolov, V.N., Shwarts, M.M., Venger, E.F.
• Format: Journal Article Conference Proceeding
• Language: English
• Published: Lausanne Elsevier B.V 30.08.1999; Elsevier Science
• Subjects: Cryogenic temperatures; Cryogenics, refrigerators; low-temperature techniques; Dielectric-metal transition; Exact sciences and technology; General equipment and techniques; Instruments, apparatus, components and techniques common to several branches of physics and astronomy; Physics; p–n junction; Sensors (chemical, optical, electrical, movement, gas, etc.); remote sensing; Silicon; Temperature sensor; Thermal instruments, apparatus and techniques; Tunneling; Tunneling; Dielectric-metal transition; Temperature sensor; Silicon; Cryogenic temperatures; p–n junction; Temperature sensors; p n junctions; Experimental study; Dielectric metal interface; Cryogenic temperature; Tunneling device
• ISSN: 0924-4247; 1873-3069
• DOI: 10.1016/S0924-4247(98)00361-6

By means of increasing the doping level of thermodiode base the silicon p 2+n +-type temperature sensors have been attained whose response curves do not exhibit the kinks in the cryogenic temperature range. The effect is connected with the suppression of freezing out of carriers to impurities in the diode base. It results in lowering of base resistance below junction one. Mechanisms responsible for the response curve form under this conditions are discussed. With this aim the sensors' current–voltage characteristics in wide ranges of temperatures and currents are measured and analysed.