Investigation of inhomogeneous structures of near-surface-layers in ion-implanted silicon

• Published in: Thin solid films Vol. 319; no. 1; pp. 39 - 43
• Main Authors: Swiatek, Z, Bonarski, J.T, Ciach, R, Kuznicki, Z.T, Fodchuk, I.M, Raransky, M.D, Gorley, P
• Format: Journal Article Conference Proceeding
• Language: English
• Published: Lausanne Elsevier B.V 29.04.1998; Elsevier Science
• Subjects: Condensed matter: structure, mechanical and thermal properties; Exact sciences and technology; Inhomogeneous structures; Ion-implanted silicon; Near-surface-layers; Physics; Single-crystal and powder diffraction; Structure and morphology; thickness; Structure of solids and liquids; crystallography; Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties); Thin film structure and morphology; X-ray diffraction and scattering; Near-surface-layers; Ion-implanted silicon; Inhomogeneous structures; Ion implantation; Semiconductor materials; Nondestructive analysis; XRD; Amorphous state; Solid-solid interfaces; Experimental study; Subsurface layer; Interface structure; Monocrystals; Nonmetals; Silicon; Thermal annealing; Buried layers; Phosphorus ions
• ISSN: 0040-6090; 1879-2731
• DOI: 10.1016/S0040-6090(97)01082-1

The ion implantation as a subject of investigations attracts increasing interest because of its technological applications. For example, the ion implantation and the adequate thermal treatment are the basic processes for fabrication of a new so-called delta-BSF solar cell. In this silicon solar cell, the continuous sub-structure of modified material (planar amorphous-like layer of nanometric thickness with very thin transition zones) is inserted into the single-crystal emitter. From earlier high resolution electron microscopy studies, it is evident that these two Si phases coexist in the form of well-defined layers separated by sharp heterointerfaces [Z.T. Kuznicki, J. Thibault, F. Chautain-Mathys, S. De Unamuno, Towards ion beam processed single-crystal Si solar cells with a very high efficiency, E-MRS Spring Meeting, Strasbourg, France, First Polish–Ukrainian Symposium, New Photovoltaic Materials for Solar Cells, October 21–22, Kraków, Poland, 1996.]. The aim of this paper is the further structural characterisation of silicon single crystal with buried `amorphous' layer. The non-destructive X-ray diffraction methods as well as the transmission electron microscopy were used to investigate the quality of the a-Si/c-Si heterointerfaces, structural homogeneity of the layers and distribution of the stress field. The measurements were carried out on an initial, as-implanted and annealed material. The 〈100〉-oriented Si single crystals were implanted with 180 keV energy P ions at room temperature.