Finite homogeneous broadening of laser gain in quantum dots at high temperature

We study the electron-LO phonon interactions in a single quantum dot based upon the nonequilibrium Green's function technique. We found that the electron-LO phonon interactions in a dot are enhanced at high temperature due to the three dimensional confinement and unfortunately deteriorate gain...

Full description

Saved in:
Bibliographic Details
Published inMicroelectronic engineering Vol. 47; no. 1; pp. 139 - 141
Main Authors Tsuchiya, H., Miyoshi, T.
Format Journal Article Conference Proceeding
LanguageEnglish
Published Amsterdam Elsevier B.V 01.06.1999
Elsevier Science
Subjects
Applied sciences
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Electron states
Electronics
Exact sciences and technology
Microelectronic fabrication (materials and surfaces technology)
Physics
Polarons and electron-phonon interactions
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Spectral function
Quantum well
Microelectronic fabrication
Quantum dot
Experimental result
Electron phonon interaction
Non equilibrium system
High temperature
Conduction band
Green function
Energy level
Online AccessGet full text

Cover

More Information
Summary:We study the electron-LO phonon interactions in a single quantum dot based upon the nonequilibrium Green's function technique. We found that the electron-LO phonon interactions in a dot are enhanced at high temperature due to the three dimensional confinement and unfortunately deteriorate gain spectrum considerably.
ISSN:0167-9317
1873-5568
DOI:10.1016/S0167-9317(99)00172-0