SERS EM field enhancement study through fast Raman mapping of Sierpinski carpet arrays

Self‐similar Sierpinski carpet fractals were fabricated using a new nanopatterning technique, i.e. solid‐state superionic stamping (S4), to study the effect of feature size on plasmon‐enhanced Raman scattering. A real‐time Raman image showing electromagnetic (EM) field enhancement contrast is demons...

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Bibliographic Details
Published inJournal of Raman spectroscopy Vol. 41; no. 10; pp. 1124 - 1130
Main Authors Hsu, Keng H., Back, Ju H., Fung, Kin-Hung, Ferreira, Placid M., Shim, Moonsub, Fang, Nicholas X.
Format Journal Article
LanguageEnglish
Published Chichester, UK John Wiley & Sons, Ltd 01.10.2010
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Summary:Self‐similar Sierpinski carpet fractals were fabricated using a new nanopatterning technique, i.e. solid‐state superionic stamping (S4), to study the effect of feature size on plasmon‐enhanced Raman scattering. A real‐time Raman image showing electromagnetic (EM) field enhancement contrast is demonstrated. The effects were studied and explained in the context of modes of surface plasmon excitation. Additionally, we find that the EM field enhancement supported by the fractals extends further spatially as compared to continuous Ag surfaces. Copyright © 2010 John Wiley & Sons, Ltd. Self‐similar Sierpinski carpet fractals were fabricated with a new nanopatterning technique, solid‐state superionic stamping (S4) to study the effect of feature size on plasmon‐enhanced Raman scattering. A real‐time Raman image showing EM field enhancement contrast is demonstrated. The effects were studied and explained in the context of modes of surface plasmon excitation. Additionally, we find that the EM field enhancement supported by the fractals extends further spatially as compared to continuous Ag surfaces.
Bibliography:ark:/67375/WNG-35HGSP7K-Z
ArticleID:JRS2581
istex:6E886F9ACA0D8D21517F571EA35C353BD704CAD1
ObjectType-Article-1
SourceType-Scholarly Journals-1
ObjectType-Feature-2
content type line 23
ISSN:0377-0486
1097-4555
1097-4555
DOI:10.1002/jrs.2581