Piezoelectric Strain Modulation in FETs

We report on a feature for the transistor, a piezoelectric layer to modulate the strain in the channel. The strain is proportional to the gate-source voltage, and thus increases as the device is turned on. As a result, the device has the leakage current of a relaxed device and the lower threshold vo...

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Bibliographic Details
Published inIEEE transactions on electron devices Vol. 60; no. 10; pp. 3265 - 3270
Main Authors van Hemert, Tom, Hueting, Raymond J. E.
Format Journal Article
LanguageEnglish
Published New York, NY IEEE 01.10.2013
Institute of Electrical and Electronics Engineers
Subjects
Applied sciences
CMOS
Design. Technologies. Operation analysis. Testing
Electronics
Exact sciences and technology
FinFET
FinFETs
Integrated circuits
Logic gates
Modulation
piezoelectric effect
power
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Silicon
Strain
subthreshold swing
Transistors
Voltage threshold
strain
MOSFET
Gate voltage
subthreshold swing
FinFET
Dual gate transistor
Self aligned technology
Field effect transistor
CMOS
piezoelectric effect
Piezoelectric materials
Complementary MOS technology
Leakage current
power
Electrical simulation
Piezoelectric thin films
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Summary:We report on a feature for the transistor, a piezoelectric layer to modulate the strain in the channel. The strain is proportional to the gate-source voltage, and thus increases as the device is turned on. As a result, the device has the leakage current of a relaxed device and the lower threshold voltage of a strained device. Our results, obtained by combining electrical and mechanical simulations, demonstrate that strain modulation can result in a 9 mV/decade smaller subthreshold swing for a FinFET.
ISSN:0018-9383
1557-9646
DOI:10.1109/TED.2013.2274817