The study of thermal stability during wet oxidation of AlAs

• Published in: Journal of crystal growth Vol. 223; no. 4; pp. 484 - 488
• Main Authors: Jia, H.Q., Chen, H., Wang, W.C., Wang, W.X., Li, W., Huang, Q., Zhou, Jiunming
• Format: Journal Article
• Language: English
• Published: Amsterdam Elsevier B.V 01.03.2001; Elsevier
• Subjects: A3. Molecular beam epitaxy; B1. Gallium compounds; B1. Oxides; B2. Dielectric materials; B2. Semiconducting gallium arsenide; Cross-disciplinary physics: materials science; rheology; Exact sciences and technology; Materials science; Methods of deposition of films and coatings; film growth and epitaxy; Molecular, atomic, ion, and chemical beam epitaxy; Oxidation; Physics; Surface treatments; B2. Dielectric materials; B2. Semiconducting gallium arsenide; B1. Oxides; B1. Gallium compounds; A3. Molecular beam epitaxy; 68.60; Aluminium arsenides; Buffer layer; Gallium arsenides; Inorganic compounds; Epitaxial layers; Semiconductor materials; Dielectric materials; Surface treatments; Experimental study; Thermal stability; Thin films; Multilayers; Wet process; Molecular beam epitaxy; Heterojunctions; Oxidation; Arsenides; III-V semiconductors
• ISSN: 0022-0248; 1873-5002
• DOI: 10.1016/S0022-0248(01)00647-9

A structure in which a 1000 Å thick AlAs layer is sandwiched between 1000 Å thick GaAs cap layer and 2000 Å GaAs buffer layer was subsequently grown by molecular beam epitaxy on the GaAs substrate. The AlAs layer was laterally oxidized in N 2 bubbled H 2O vapor ambient at 400°C for 20, 30, 40, 60, and 120 min. It was found that the thermal stability of the mesas is very dependent on the removal rate of volatile products, such as As and As 2O 3. The removal of volatile products is dependent on the oxidation time and temperature. The Raman spectra presented here proved that the spectra were different from samples, oxidized for different time durations.