Some trends in preparing film structures by ion beam methods
Film deposition by ion beam sputtering or condensation offers interesting possibilities for the preparation of special layer structures because activation energy can be supplied to the growing film in a defined manner. Some results of recent work on the ion beam sputtering of Nb x Ge y under ultrahi...
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Published in | Thin solid films Vol. 50; pp. 135 - 144 |
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Main Authors | , |
Format | Journal Article |
Language | English |
Published |
Elsevier B.V
01.05.1978
|
Online Access | Get full text |
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Summary: | Film deposition by ion beam sputtering or condensation offers interesting possibilities for the preparation of special layer structures because activation energy can be supplied to the growing film in a defined manner. Some results of recent work on the ion beam sputtering of Nb
x
Ge
y
under ultrahigh vacuum conditions using
in situ diagnostics and on the dual beam deposition of Si
3N
4 and diamond-like carbon are presented. Further trends are discussed in connection with methods of condensing low energy ions. |
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Bibliography: | ObjectType-Article-2 SourceType-Scholarly Journals-1 ObjectType-Feature-1 content type line 23 |
ISSN: | 0040-6090 1879-2731 |
DOI: | 10.1016/0040-6090(78)90099-8 |