Development of Supramolecular Metallogel Derived from Nickel(II)-Salt and Adipic Acid: An Effective Material for Microelectronic Semiconducting Device Application

An approach for the ultrasonication based synthesis of nickel(II)-metallogel was devised by employing nickel(II)-acetate salt and adipic acid at room temperature in dimethylformamide (DMF) medium. The metallogel was shown to be mechanically stable and self-healing using rheological and thixotropic a...

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Published inChemistry Africa Vol. 6; no. 6; pp. 3217 - 3228
Main Authors Dhibar, Subhendu, Ojha, Saurav K., Karmakar, Kripasindhu, Karmakar, Priya, Bhattacharjee, Subham, Chatterjee, Priyajit, Ojha, Animesh K., Saha, Bidyut
Format Journal Article
LanguageEnglish
Published Cham Springer International Publishing 01.12.2023
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Summary:An approach for the ultrasonication based synthesis of nickel(II)-metallogel was devised by employing nickel(II)-acetate salt and adipic acid at room temperature in dimethylformamide (DMF) medium. The metallogel was shown to be mechanically stable and self-healing using rheological and thixotropic analyses. Ni(II)-metallogel was described by its stone-like morphological features using field emission scanning electron microscopy (FESEM) study. The main chemical components of the metallogel have been verified by the energy dispersive X-ray (EDX) elemental mapping measurement. Additionally, the electronic device based on the metal-semiconductor (MS) junction demonstrates the electrical conductivity because of supramolecular arrangement of the Ni(II)-metallogel. Extensive testing was done to determine the metallogel’s electrical properties. There was an investigation on the synthesised Ni(II)-metallogel based device’s semi-conductive properties, and a Schottky barrier diode was fabricated successfully. Graphical Abstract Adipic acid is used as a low molecular weight gelator to synthesize a metallogel in presence of Nickel(II)-ion, which offers semiconducting nature of the metallogel and it has been further verified with electronic device characterization.
ISSN:2522-5758
2522-5766
DOI:10.1007/s42250-023-00680-w