Atomic layer epitaxy of ZnTe by isothermal closed space sublimation

• Published in: Journal of crystal growth Vol. 223; no. 4; pp. 447 - 449
• Main Authors: Larramendi, E.M., Purón, E., Hernández, L.C., Sánchez, M., De Roux, S., de Melo, O., Romero-Paredes, G., Peña-Sierra, R., Tamura, M.
• Format: Journal Article
• Language: English
• Published: Amsterdam Elsevier B.V 01.03.2001; Elsevier
• Subjects: A3. Atomic layer epitaxy; B2. Semiconducting II–VI materials; Cross-disciplinary physics: materials science; rheology; Exact sciences and technology; Materials science; Methods of deposition of films and coatings; film growth and epitaxy; Physics; Vapor phase epitaxy; growth from vapor phase; 81.10.Aj; A3. Atomic layer epitaxy; 81.15.Hi; 68.55.jk; 81.05.Dz; B2. Semiconducting II–VI materials; Tellurides; Atomic layer method; Inorganic compounds; Epitaxial layers; Semiconductor materials; Electron diffraction; Zinc tellurides; Sublimation; Transition element compounds; Crystal growth from vapors; XRD; Experimental study; Thin films; II-VI semiconductors; Optical method; Self regulation; Isothermal crystallization
• ISSN: 0022-0248; 1873-5002
• DOI: 10.1016/S0022-0248(01)00648-0

Atomic layer epitaxy growth of ZnTe films is achieved using a novel isothermal closed-space sublimation system with elemental sources. X-rays, electron diffraction and optical measurements indicated the epitaxial quality of the films and confirmed a self-regulated atomic layer epitaxy regime. As the procedure is near equilibrium, the self-regulation mechanism is different from that occurring in other techniques like molecular beam epitaxy. In the present case, the difference in vapor pressures between the elemental source and the growing surface is the driving force for the growth; this difference being zero once the surface is completely covered.