MHEMT G -Band Low-Noise Amplifiers

To improve the performance of G-band equipment for humidity sounding of the atmosphere, a high-gain and low-noise amplifier is needed. Here, the performances of 165 and 183 GHz low-noise amplifier microchips intended for atmospheric water vapor profiling application are reported. The microchips are...

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Bibliographic Details
Published inIEEE transactions on terahertz science and technology Vol. 4; no. 4; pp. 459 - 468
Main Authors Karkkainen, Mikko, Kantanen, Mikko, Caujolle-Bert, Sylvain, Varonen, Mikko, Weber, Rainer, Leuther, Arnulf, Seelmann-Eggebert, Matthias, Alanne, Ari, Jukkala, Petri, Närhi, Tapani, Halonen, Kari A. I.
Format Journal Article
LanguageEnglish
Published IEEE 01.07.2014
Subjects
Frequency measurement
Gain
Gain measurement
Low-noise amplifiers (LNAs)
mHEMTs
millimeter-wave integrated circuits
millimeter-wave transistors
MMICs
MODFETs
Noise
Noise measurement
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Summary:To improve the performance of G-band equipment for humidity sounding of the atmosphere, a high-gain and low-noise amplifier is needed. Here, the performances of 165 and 183 GHz low-noise amplifier microchips intended for atmospheric water vapor profiling application are reported. The microchips are manufactured in metamorphic high-electron mobility transistor technology having a gate length of 50 nm. The on-wafer measured results show noise figures of 4.4-7.4 dB and 16-25 dB gain at the operating frequencies. In addition, two of the amplifiers were assembled in waveguide packages and the measured results show a gain of 19-20 dB and 7 dB noise figure at both 165 and 183 GHz.
ISSN:2156-342X
2156-3446
DOI:10.1109/TTHZ.2014.2327383