Growth of InGaN and double heterojunction structure with InGaN back barrier

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Bibliographic Details
Published inJournal of semiconductors Vol. 31; no. 12; p. 123001
Main Authors Shi, Linyu (林玉 史), Zhang, Jincheng (进城 张), Wang, Hao (昊王), Xue, Junshuai (军帅 薛), Ou, Xinxiu (新秀 欧), Fu, Xiaofan (小凡 付), Chen, Ke (珂陈), Hao, Yue (跃郝)
Format Journal Article
LanguageEnglish
Published IOP Publishing 01.12.2010
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ISSN1674-4926
DOI10.1088/1674-4926/31/12/123001

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ISSN:1674-4926
DOI:10.1088/1674-4926/31/12/123001