Potassium niobate thin films prepared through polymeric precursor method

Thin films of potassium niobate were deposited on (100) Si substrates by the polymeric precursor method (Pechini method). Annealing in static air was performed at 600° C for 20 h. The obtained films were characterized by X-ray diffraction and atomic force microscopy (AFM). Electrical characterizatio...

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Bibliographic Details
Published inMaterials letters Vol. 58; no. 20; pp. 2537 - 2540
Main Authors Simões, A.Z, Ries, A, Riccardi, C.S, Gonzalez, A.H, Zaghete, M.A, Stojanovic, B.D, Cilense, M, Varela, J.A
Format Journal Article
LanguageEnglish
Published Elsevier B.V 01.08.2004
Subjects
Dielectric constant
Dissipation factor
KNbO 3
Dissipation factor
Dielectric constant
KNbO 3
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Summary:Thin films of potassium niobate were deposited on (100) Si substrates by the polymeric precursor method (Pechini method). Annealing in static air was performed at 600° C for 20 h. The obtained films were characterized by X-ray diffraction and atomic force microscopy (AFM). Electrical characterization of the films pointed to ferroelectricity via hysteresis loop. The dielectric constant, dissipation factor and resistance were measured in frequency region from 10 Hz to 10 MHz. At 1 MHz, the dielectric constant was 158 and the dissipation factor was 0.11.
Bibliography:ObjectType-Article-2
SourceType-Scholarly Journals-1
ObjectType-Feature-1
content type line 23
ISSN:0167-577X
1873-4979
DOI:10.1016/j.matlet.2004.03.025