Field electron and field ion imaging of silicon surfaces

• Published in: Surface science Vol. 206; no. 1; pp. 244 - 258
• Main Authors: Schmidt, W.A., Naschitzki, M.
• Format: Journal Article
• Language: English
• Published: Lausanne Elsevier B.V 01.11.1988; Amsterdam Elsevier Science; New York, NY
• Subjects: Condensed matter: structure, mechanical and thermal properties; Exact sciences and technology; Physics; Solid surfaces and solid-solid interfaces; Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties); Crystal growth; Non metal; Annealing; Hydrogen; Facetting; Desorption; High temperature; Experimental study; Surface structure; Self diffusion; Sample preparation; Adsorption; Field ion microscopy; Field electron microscopy; Silicon; Low temperature
• ISSN: 0039-6028; 1879-2758
• DOI: 10.1016/0039-6028(88)90024-6

For field electron and field ion imaging of Si, two surface preparation methods have been used. One preparation is done at cryogenic temperatures in the presence of atomic hydrogen whose formation is field-induced. This leads to a hydrogen field desorption end form, which can be further treated by field evaporation and imaging in Ne. Because field evaporation from this end form occurs as Si clusters, only a few planes appear ordered. The other preparation method takes advantage of Si surface diffusion during annealing at about 1000 K, which is accompanied by the growth of several kinds of planes, to form a thermal end form. According to crystal growth theory, the observed planes belong to equilibrium form planes and planes of intermediate areas. Images in Ar or Ne of the Si thermal end form are dominated by the edges of a facetted crystal rather than by the terraces showing reconstruction. Reconstruction after a high temperature anneal is expected but could not be imaged below the onset of field evaporation.