Noise in phosphorus-implanted buried channel MOS transistors

Noise measurements on phosphorus-implanted buried channel MOS transistors are reported. The data are interpreted as two superimposed generation-recombination ( g – r) spectra with different time constants plus a white spectrum due to thermal-like noise of the conducting channel.

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Bibliographic Details
Published inSolid-state electronics Vol. 23; no. 12; pp. 1195 - 1196
Main Authors Liu, S.T., Tufte, O.N., van der Ziel, A., Pai, S.Y., Larson, W.
Format Journal Article
LanguageEnglish
Published Elsevier Ltd 01.01.1980
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Summary:Noise measurements on phosphorus-implanted buried channel MOS transistors are reported. The data are interpreted as two superimposed generation-recombination ( g – r) spectra with different time constants plus a white spectrum due to thermal-like noise of the conducting channel.
Bibliography:ObjectType-Article-2
SourceType-Scholarly Journals-1
ObjectType-Feature-1
content type line 23
ISSN:0038-1101
1879-2405
DOI:10.1016/0038-1101(80)90112-4