Noise in phosphorus-implanted buried channel MOS transistors
Noise measurements on phosphorus-implanted buried channel MOS transistors are reported. The data are interpreted as two superimposed generation-recombination ( g – r) spectra with different time constants plus a white spectrum due to thermal-like noise of the conducting channel.
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Published in | Solid-state electronics Vol. 23; no. 12; pp. 1195 - 1196 |
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Main Authors | , , , , |
Format | Journal Article |
Language | English |
Published |
Elsevier Ltd
01.01.1980
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Online Access | Get full text |
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Summary: | Noise measurements on phosphorus-implanted buried channel MOS transistors are reported. The data are interpreted as two superimposed generation-recombination (
g –
r) spectra with different time constants plus a white spectrum due to thermal-like noise of the conducting channel. |
---|---|
Bibliography: | ObjectType-Article-2 SourceType-Scholarly Journals-1 ObjectType-Feature-1 content type line 23 |
ISSN: | 0038-1101 1879-2405 |
DOI: | 10.1016/0038-1101(80)90112-4 |