Optical absorption of EuTe in high magnetic fields

For the first time, the optical absorption edge of the magnetic semiconductor europium telluride has been studied at low temperature (1.7 K) as a function of magnetic field in the high field range 0 ≤ H ≤ 9.5 Tesla, and related to the magnetic phase diagram of this material. The exponential absorpti...

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Bibliographic Details
Published inSolid state communications Vol. 28; no. 8; pp. 597 - 600
Main Authors Schmutz, L.E., Dresselhaus, G., Dresselhaus, M.S.
Format Journal Article
LanguageEnglish
Published Elsevier Ltd 01.01.1978
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Summary:For the first time, the optical absorption edge of the magnetic semiconductor europium telluride has been studied at low temperature (1.7 K) as a function of magnetic field in the high field range 0 ≤ H ≤ 9.5 Tesla, and related to the magnetic phase diagram of this material. The exponential absorption edge has been parameterized using a magnetic field dependent extension of Urbach's rule, and the observations are found to be consistent with a simple dependence of the gap parameter on polarization and magnetic field.
Bibliography:ObjectType-Article-2
SourceType-Scholarly Journals-1
ObjectType-Feature-1
content type line 23
ISSN:0038-1098
1879-2766
DOI:10.1016/0038-1098(78)90588-4