Comparative Analysis of Al-Doped ZnO and Ga-Doped ZnO Thin Films

We have investigated the influences of aluminum and gallium dopants (0∼2.0 mol.%) on zinc oxide (ZnO) thin films regarding crystallization, electrical and optical properties for applications in transparent conducting oxide (TCO) devices. Al- and Ga-doped ZnO thin films were deposited on glass substr...

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Published inIntegrated ferroelectrics Vol. 140; no. 1; pp. 166 - 176
Main Authors Jun, Min-Chul, Park, Sang-Uk, Koh, Jung-Hyuk
Format Journal Article
LanguageEnglish
Published Philadelphia Taylor & Francis Group 01.01.2012
Taylor & Francis Ltd
Subjects
AZO
Chemical elements
Comparative analysis
Ferroelectrics
Glass substrates
GZO
Spin-coating
Thin films
Transparent conducting oxide
Zinc oxides
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Summary:We have investigated the influences of aluminum and gallium dopants (0∼2.0 mol.%) on zinc oxide (ZnO) thin films regarding crystallization, electrical and optical properties for applications in transparent conducting oxide (TCO) devices. Al- and Ga-doped ZnO thin films were deposited on glass substrates. A lowest sheet resistance of 3.3 × 10 3 Ω/□ was obtained for the GZO thin film doped with 1.5 mol.% of Ga after post-annealing at 650 °C for 60 min in air. All the films showed more than 85% transparency in the visible region. We have studied the structural and microstructure properties as a function of Al and Ga concentration through X-ray diffraction (XRD) and scanning electron microscope (SEM) analysis. In addition, the optical bad gap (E g ) and photoluminescence (PL) were estimated.
ISSN:1058-4587
1607-8489
DOI:10.1080/10584587.2012.741905