A 4.69-W/mm output power density InAlN/GaN HEMT grown on sapphire substrate

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Bibliographic Details
Published inJournal of semiconductors Vol. 32; no. 12; p. 124003
Main Authors Liu, Bo (波刘), Feng, Zhihong (志红冯), Zhang, Sen (森张), Dun, Shaobo (少博敦), Yin, Jiayun (甲运尹), Li, Jia (佳李), Wang, Jingjing (晶晶王), Zhang, Xiaowei (效帏张), Fang, Yulong (玉龙房), Cai, Shujun (树军蔡)
Format Journal Article
LanguageEnglish
Published IOP Publishing 01.12.2011
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ISSN:1674-4926
DOI:10.1088/1674-4926/32/12/124003